Apparatus for chemical vapor deposition control

ABSTRACT

A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to co-pending U.S. patent application Ser.No. 12/______, entitled “METHOD FOR CHEMICAL VAPOR DEPOSITION CONTROL”,Docket No. TDC-026, filed on even date herewith; pending U.S. patentapplication Ser. No. 11/693,067, entitled “VAPOR DEPOSITION SYSTEM ANDMETHOD OF OPERATING”, Docket No. TTCA-195, filed on Mar. 29, 2007;pending U.S. patent application Ser. No. 12/044,574, entitled “GASHEATING DEVICE FOR A VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING”,Docket No. TTCA-216, filed on Mar. 7, 2008; and pending U.S. patentapplication Ser. No. 12/559,398, entitled “HIGH TEMPERATURE GAS HEATINGDEVICE FOR A VAPOR DEPOSITION SYSTEM”, Docket No. TTCA-317, filed onSep. 14, 2009. The entire content of these applications are hereinincorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of Invention

The invention relates to a processing system and method for treating asubstrate, and more particularly to a deposition system and method fordepositing a thin film using a deposition process.

2. Description of Related Art

During material processing, such as semiconductor device manufacturingfor production of integrated circuits (ICs), vapor deposition is acommon technique to form thin films, as well as to form conformal thinfilms over and within complex topography, on a substrate. Vapordeposition processes can include chemical vapor deposition (CVD) andplasma enhanced CVD (PECVD). For example, in semiconductormanufacturing, such vapor deposition processes may be used for gatedielectric film formation in front-end-of-line (FEOL) operations, andlow dielectric constant (low-k) or ultra-low-k, porous or non-porous,dielectric film formation and barrier/seed layer formation formetallization in back-end-of-line (BEOL) operations, as well ascapacitor dielectric film formation in DRAM production.

In a CVD process, a continuous stream of film precursor vapor isintroduced to a process chamber containing a substrate, wherein thecomposition of the film precursor has the principal atomic or molecularspecies found in the film to be formed on the substrate. During thiscontinuous process, the precursor vapor is chemisorbed on the surface ofthe substrate while it thermally decomposes and reacts with or withoutthe presence of an additional gaseous component that assists thereduction of the chemisorbed material, thus, leaving behind the desiredfilm.

In a PECVD process, the CVD process further includes plasma that isutilized to alter or enhance the film deposition mechanism. Forinstance, plasma excitation can allow film-forming reactions to proceedat temperatures that are significantly lower than those typicallyrequired to produce a similar film by thermally excited CVD. Inaddition, plasma excitation may activate film-forming chemical reactionsthat are not energetically or kinetically favored in thermal CVD.

Other CVD techniques include hot-filament CVD (otherwise known ashot-wire CVD or pyrolytic CVD). In hot-filament CVD, a film precursor isthermally decomposed by a resistively heated filament, and the resultingfragmented molecules adsorb and react on the surface of the substrate toleave the desired film. Unlike PECVD, hot-filament CVD does not requireformation of plasma.

SUMMARY OF THE INVENTION

The invention relates to a processing system and method for treating asubstrate, and more particularly to a deposition system and method fordepositing a thin film using a deposition process, such as a vapordeposition process.

The invention further relates to a deposition system and method fordepositing a thin film using filament-assisted chemical vapor deposition(CVD) or pyrolytic CVD, wherein a gas heating device comprising aheating element array is utilized to pyrolize a film formingcomposition.

According to one embodiment, a gas heating device for use in adeposition system is described. The gas heating device may be configuredto heat one or more constituents of a film forming composition. The gasheating device comprises a heating element array having a plurality ofheating element zones configured to receive a flow of a film formingcomposition across or through the plurality of heating element zones inorder to cause pyrolysis of one or more constituents of the film formingcomposition when heated, each of the plurality of heating element zonescomprises one or more resistive heating elements, wherein each of theplurality of heating element zones is configured electricallyindependent of one another, and wherein each of the plurality of heatingelement zones is arranged to interact with at least a portion of theflow, and affect pyrolysis of and delivery of the film formingcomposition to different regions of the substrate; and one or more powersources coupled to the heating element array, and configured to providean electrical signal to each of the plurality of heating element zones.

According to another embodiment, a deposition system for depositing athin film on a substrate using a gas heating device is described. Thedeposition system comprises a process chamber having a pumping systemconfigured to evacuate the process chamber; a substrate holder coupledto the process chamber and configured to support the substrate; and agas distribution system coupled to the process chamber and configured tointroduce a film forming composition to a process space in the vicinityof a surface of the substrate. The deposition system further comprises aheating element array having a plurality of heating element zonesconfigured to receive a flow of the film forming composition across orthrough the plurality of heating element zones in order cause pyrolysisof one or more constituents of the film forming composition when heated,each of the plurality of heating element zones comprises one or moreresistive heating elements, wherein each of the plurality of heatingelement zones is configured electrically independent of one another, andwherein each of the plurality of heating element zones is arranged tointeract with at least a portion of the flow, and affect pyrolysis ofand delivery of the film forming composition to different regions of thesubstrate; and one or more power sources coupled to the heating elementarray, and configured to provide an electrical signal to each of theplurality of heating element zones.

According to yet another embodiment, a method of depositing a thin filmon a substrate in a deposition system is described. The methodcomprises: disposing a gas heating device comprising a plurality ofheating element zones in a deposition system, each of the plurality ofheating element zones having one or more resistive heating elements;independently controlling a temperature of each of the plurality ofheating element zones; providing a substrate on a substrate holder inthe deposition system, wherein the substrate holder comprises one ormore temperature control zones; providing a film forming composition tothe gas heating device coupled to the deposition system; pyrolizing oneor more constituents of the film forming composition using the gasheating device; and introducing the film forming composition to thesubstrate in the deposition system to deposit a thin film on thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 depicts a schematic view of a deposition system according to anembodiment;

FIG. 2 depicts a schematic view of a gas distribution system accordingto an embodiment;

FIG. 3A depicts a schematic cross-sectional view of a deposition systemaccording to another embodiment;

FIG. 3B depicts a schematic cross-sectional view of a deposition systemaccording to another embodiment;

FIG. 3C depicts a schematic cross-sectional view of a deposition systemaccording to another embodiment;

FIG. 3D depicts a schematic cross-sectional view of a deposition systemaccording to another embodiment;

FIG. 3E depicts a schematic cross-sectional view of a deposition systemaccording to yet another embodiment;

FIG. 4 provides a top view of a gas heating device according to anembodiment;

FIG. 5A provides a top view of a heating element according to anembodiment;

FIG. 5B provides a side view of the heating element shown in FIG. 4A;

FIG. 6A provides a top view of a dynamic mounting device according to anembodiment;

FIG. 6B provides a side view of the dynamic mounting device shown inFIG. 6A;

FIG. 6C provides a cross-sectional view of the dynamic mounting deviceshown in FIG. 6A;

FIG. 6D provides a perspective view of the dynamic mounting device shownin FIG. 6A;

FIG. 7 provides a top view of a heating element according to anotherembodiment;

FIG. 8 illustrates a method of depositing a film on a substrateaccording to an embodiment; and

FIG. 9 illustrates a method of depositing a film on a substrateaccording to another embodiment.

DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS

In the following description, in order to facilitate a thoroughunderstanding and for purposes of explanation and not limitation,specific details are set forth, such as a particular geometry of theprocessing system and descriptions of various components, as well as themethods and processes used therein.

However, one skilled in the relevant art will recognize that the variousembodiments may be practiced without one or more of the specificdetails, or with other replacement and/or additional methods, materials,or components. In other instances, well-known structures, materials, oroperations are not shown or described in detail to avoid obscuringaspects of various embodiments of the invention. Similarly, for purposesof explanation, specific numbers, materials, and configurations are setforth in order to provide a thorough understanding of the invention.Nevertheless, the invention may be practiced without specific details.Furthermore, it is understood that the various embodiments shown in thefigures are illustrative representations and are not necessarily drawnto scale.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, material, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the invention, but do not denote that theyare present in every embodiment. Thus, the appearances of the phrases“in one embodiment” or “in an embodiment” in various places throughoutthis specification are not necessarily referring to the same embodimentof the invention. Furthermore, the particular features, structures,materials, or characteristics may be combined in any suitable manner inone or more embodiments. Various additional layers and/or structures maybe included and/or described features may be omitted in otherembodiments.

As described above, the invention relates to a processing system andmethod for treating a substrate, and more particularly to a depositionsystem and method for depositing a thin film using a deposition process,such as a vapor deposition process. Moreover, the invention furtherrelates to a deposition system and method for depositing a thin filmusing filament-assisted chemical vapor deposition (CVD) or pyrolyticCVD, wherein a gas heating device comprising a heating element array isutilized to pyrolize a film forming composition.

Therein, the inventors have recognized that high quality, robust thinfilms may be produced on a substrate when, among other things, enablingthe filament-assisted CVD or pyrolytic CVD system to spatially controlvarious process mechanisms or parameters. Some of these processmechanisms may include: (1) modification and/or spatial/temporal controlof the reaction zone at the heating element array, e.g., spatial and/ortemporal adjustment of the film forming chemistry at the reaction zone;(2) modification and/or spatial/temporal control of the surfacereactivity at the substrate or substrate holder, e.g., spatial and/ortemporal adjustment of the substrate temperature; and (3) modificationand/or spatial/temporal control of the diffusion path length between thereaction zone (i.e., the heating element array) and the substrate orsubstrate holder.

Referring now to the drawings, wherein like reference numerals designateidentical or corresponding parts throughout the several views, FIG. 1schematically illustrates a deposition system 1 for depositing a thinfilm, such as a conductive film, a non-conductive film, or asemi-conductive film. For example, the thin film can include adielectric film, such as a low dielectric constant (low-k) orultra-low-k dielectric film, or the thin film may include a sacrificiallayer for use in air gap dielectrics. Deposition system 1 can include achemical vapor deposition (CVD) system or thermally-assisted vapordeposition system, wherein a film forming composition is thermallyactivated or decomposed in order to form a film on a substrate. Forexample, the deposition system 1 comprises a filament-assisted CVD(FACVD) system or a pyrolytic CVD system.

The deposition system 1 comprises a process chamber 10 having asubstrate holder 20 configured to support a substrate 25, upon which thethin film is formed. Furthermore, the substrate holder is configured tocontrol the temperature of the substrate at a temperature suitable forthe film forming reactions.

The process chamber 10 is coupled to a film forming composition deliverysystem 30 configured to introduce a film forming composition to theprocess chamber 10 through a gas distribution system 40. Furthermore, agas heating device 45 is coupled to or downstream from the gasdistribution system 40 and configured to chemically modify the filmforming composition.

The gas heating device 45 comprises a heating element array 55 having aplurality of heating element zones 55(A,B,C) configured to receive aflow of a film forming composition from the film forming compositiondelivery system 30 and the gas distribution system 40 across or throughthe plurality of heating element zones 55(A,B,C) in order to causepyrolysis of one or more constituents of the film forming compositionwhen heated. Each of the plurality of heating element zones 55(A,B,C)comprises one or more heating elements, and is configured electricallyindependent of one another, wherein each of the plurality of heatingelement zones 55(A,B,C) is arranged to interact with at least a portionof the flow, and affect pyrolysis of and delivery of the film formingcomposition to different process regions of the substrate 25. Althoughthree heating element zones and process regions are illustrated, theheating element array 55 may be configured with less (e.g., two) or more(e.g., four, five, etc.).

As indicated above, the plurality of heating element zones 55 (A,B,C)may facilitate the modification and/or spatial/temporal control of thereaction zone at the heating element array, e.g., spatial and/ortemporal adjustment of the film forming chemistry at the reaction zone;and/or the modification and/or spatial/temporal control of the diffusionpath length between the reaction zone (i.e., the heating element array)and the substrate or substrate holder. For example, the spacing and/ororientation of the plurality of heating element zones 55(A,B,C) relativeto one another and/or the substrate may be adjusted.

One or more power sources 50 are coupled to the heating element array55, and configured to provide an electrical signal to each of theplurality of heating element zones 55(A,B,C). For example, each of theheating element zones 55(A,B,C) may comprise one or more resistiveheating elements. When electrical current flows through and affectsheating of the one or more resistive heating elements, the interactionof these heated elements with the film forming composition causespyrolysis of one or more constituents of the film forming composition.

The process chamber 10 is further coupled to a vacuum pumping system 60through a duct 62, wherein the vacuum pumping system 60 is configured toevacuate the process chamber 10 and the gas distribution system 40 to apressure suitable for forming the thin film on the substrate 25 andsuitable for pyrolysis of the film forming composition.

The film forming composition delivery system 30 can include one or morematerial sources configured to introduce a film forming composition tothe gas distribution system 40. For example, the film formingcomposition may include one or more gases, or one or more vapors formedin one or more gases, or a mixture of two or more thereof. The filmforming composition delivery system 30 can include one or more gassources, or one or more vaporization sources, or a combination thereof.Herein vaporization refers to the transformation of a material (normallystored in a state other than a gaseous state) from a non-gaseous stateto a gaseous state. Therefore, the terms “vaporization,” “sublimation”and “evaporation” are used interchangeably herein to refer to thegeneral formation of a vapor (gas) from a solid or liquid precursor,regardless of whether the transformation is, for example, from solid toliquid to gas, solid to gas, or liquid to gas.

When the film forming composition is introduced to the gas heatingdevice 45, one or more constituents of the film forming composition aresubjected to pyrolysis by the gas heating device 45 described above. Thefilm forming composition can include film precursors that may or may notbe fragmented by pyrolysis in the gas heating device 45. The filmprecursor or precursors may include the principal atomic or molecularspecies of the film desired to be produced on the substrate.Additionally, the film forming composition can include a reducing agentthat may or may not be fragmented by pyrolysis in the gas heating device45. The reducing agent or agents may assist with the reduction of a filmprecursor on substrate 25. For instance, the reducing agent or agentsmay react with a part of or substantially all of the film precursor onsubstrate 25. Additionally yet, the film forming composition can includea polymerizing agent (or cross-linker) that may or may not be fragmentedby pyrolysis in the gas heating device 45. The polymerizing agent mayassist with the polymerization of a film precursor or fragmented filmprecursor on substrate 25.

According to one embodiment, when forming a polymer or copolymer thinfilm on substrate 25, a film forming composition comprising one or moremonomer gases is introduced to the gas heating device 45, i.e., theheating element array 55, having a temperature sufficient to pyrolyzeone or more of the monomers and produce a source of reactive species.These reactive species are introduced to and distributed within processspace 33 in the vicinity of the upper surface of substrate 25. Substrate25 is maintained at a temperature lower than that of the gas heatingdevice 45 in order to condensate and induce polymerization of thechemically altered film forming composition at the upper surface ofsubstrate 25.

The film forming composition can include an initiator that may or maynot be fragmented by pyrolysis in the gas heating device 45. Aninitiator or fragmented initiator may assist with the fragmentation of afilm precursor, or the polymerization of a film precursor. The use of aninitiator can permit higher deposition rates at lower heat sourcetemperatures. For instance, the one or more heating elements can be usedto fragment the initiator to produce radical species of the initiator(i.e., a fragmented initiator) that are reactive with one or more of theremaining constituents in the film forming composition. Furthermore, forinstance, the fragmented initiator or initiator radicals can catalyzethe formation of radicals of the film forming composition. The initiatormay include a peroxide. Additionally, for example, the initiator mayinclude: an organic peroxide, such as di-tert-butyl peroxide,di-tert-amyl peroxide, or tert-butyl peroxybenzoate; an azo compound,such as 2,2′-azobisisobutyronitrile; or another monomer, such asperfluorooctane sulfonyl fluoride.

In one example, when forming an organosilicon polymer, monomer gas(es)of an organosilicon precursor is used. Additionally, for example, whenforming a fluorocarbon-organosilicon copolymer, monomer gases of afluorocarbon precursor and organosilicon precursor are used.

In another example, when forming a fluorocarbon-organosilicon copolymer,the initiator can be perfluorooctane sulfonyl fluoride (PFOSF) used inthe polymerization of a cyclic vinylmethylsiloxane, such as1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V₃D₃).

In another example, when forming a porous SiCOH-containing film, thefilm forming composition may comprise a structure-forming material and apore-generating material. The structure-forming material may comprisediethoxymethylsilane (DEMS) and the pore-generating material maycomprise alpha-terpinene (ATRP). The porous SiCOH-containing film may beused as a low dielectric constant (low-k) material.

In another example, when forming a cross-linked neopentyl methacrylateorganic glass, the film forming composition may comprise a monomer, across-linker, and an initiator. The monomer may comprisetrimethylsilylmethyl methacrylate (TMMA), propargyl methacrylate (PMA),cyclopentyl methacrylate (CPMA), neopentyl methacrylate (npMA), and poly(neopentyl methacrylate) (P(npMA)), and the cross-linker may compriseethylene glycol diacrylate (EGDA), ethylene glycol dimethacrylate(EGDMA), 1,3-propanediol diacrylate (PDDA), or 1,3-propanedioldimethacrylate (PDDMA), or any combination of two or more thereof.Additionally, the initiator may comprise one or more peroxides, one ormore hydroperoxides, and/or one or more diazines. Additionally yet, theinitiator may comprise a tert-butyl peroxide (TBPO), or a di-tert-butylperoxide (DTBPO).

In another example, the polymer film may comprise P(npMA-co-EGDA)(poly(neopentyl methacrylate-co-ethylene glycol diacrylate)), and themonomer comprises npMA (neopentyl methacrylate) and the cross-linkercomprises EGDA (ethylene glycol diacrylate). The polymer film may beused as a sacrificial air gap material.

In yet another example, silicon-containing films, organic-containingfilms, and/or organosilicon-containing films may be deposited using anyone of the processes and chemical precursors described in pending U.S.patent application Ser. No. 12/730,088, entitled “CHEMICAL VAPORDEPOSITION METHOD”, Docket No. TDC-017, filed on Mar. 23, 2010.

According to one embodiment, the film forming composition deliverysystem 30 can include a first material source 32 configured to introduceone or more film precursors to the gas distribution system 40, and asecond material source 34 configured to introduce a (chemical) initiatorto the gas distribution system 40. Furthermore, the film formingcomposition delivery system 30 can include additional gas sourcesconfigured to introduce an inert gas, a carrier gas, a dilution gas, oran oxidizing agent. For example, the inert gas, carrier gas or dilutiongas can include a noble gas, i.e., He, Ne, Ar, Kr, Xe, or Rn.

Referring again to FIG. 1, the power source 50 is configured to providean electrical signal to the one or more resistive film heating elementsin the heating element array 55. For example, the power source 50 can beconfigured to deliver either DC (direct current) power or AC(alternating current) power. Additionally, for example, the power source50 may be configured to provide continuous power or variable power.Furthermore, for example, the power source 50 may be configured tomodulate the power, or provide pulsed power, stepped power, or rampedpower, or any combination of two or more thereof. Furthermore, forexample, the power source 50 can be configured to perform at least oneof setting, monitoring, adjusting or controlling a power, a voltage, ora current.

Referring still to FIG. 1, a temperature control system 22 can becoupled to the gas distribution system 40, the gas heating device 45,the process chamber 10, and/or the substrate holder 20, and configuredto control the temperature of one or more of these components. Thetemperature control system 22 can include a temperature measurementsystem configured to measure the temperature of the gas distributionsystem 40 at one or more locations, the temperature of the gas heatingdevice 45 at one or more locations, the temperature of the processchamber 10 at one or more locations and/or the temperature of thesubstrate holder 20 at one or more locations. The measurements oftemperature can be used to adjust or control the temperature at one ormore locations in deposition system 1.

The temperature measuring device, utilized by the temperaturemeasurement system, can include an optical fiber thermometer, an opticalpyrometer, a band-edge temperature measurement system as described inpending U.S. patent application Ser. No. 10/168,544, filed on Jul. 2,2002, the contents of which are incorporated herein by reference intheir entirety, or a thermocouple such as a K-type thermocouple.Examples of optical thermometers include: an optical fiber thermometercommercially available from Advanced Energies, Inc., Model No. OR2000F;an optical fiber thermometer commercially available from LuxtronCorporation, Model No. M600; or an optical fiber thermometercommercially available from Takaoka Electric Mfg., Model No. FT-1420.

Alternatively, when measuring the temperature of one or more resistiveheating elements, the electrical characteristics of each resistiveheating element can be measured. For example, two or more of thevoltage, current or power coupled to the one or more resistive heatingelements can be monitored in order to measure the resistance of eachresistive heating element. The variations of the element resistance canarise due to variations in temperature of the element which affects theelement resistivity.

According to program instructions from the temperature control system 22or the controller 80 or both, the power source 50 can be configured tooperate the gas heating device 45, e.g., the one or more heatingelements, at a temperature ranging from approximately 100 degrees C. toapproximately 600 degrees C. For example, the temperature can range fromapproximately 200 degrees C. to approximately 550 degrees C. Thetemperature can be selected based upon the film forming composition and,more particularly, the temperature can be selected based upon aconstituent of the film forming composition.

Additionally, according to program instructions from the temperaturecontrol system 22 or the controller 80 or both, the temperature of thegas distribution system 40 can be set to a value approximately equal toor less than the temperature of the gas heating device 45, i.e., the oneor more heating elements. For example, the temperature can be a valueless than or equal to approximately 1200 degrees C. Additionally, forexample, the temperature can be a value less than approximately 1000degrees C. Additionally, for example, the temperature can be a valueless than approximately 800 degrees C. Additionally, for example, thetemperature can be a value less than approximately 600 degrees C.Additionally, for example, the temperature can be a value less thanapproximately 550 degrees C. Further yet, for example, the temperaturecan range from approximately 80 degrees C. to approximately 550 degreesC. The temperature can be selected to be approximately equal to or lessthan the temperature of the one or more heating elements, and to besufficiently high to prevent condensation which may or may not causefilm formation on surfaces of the gas distribution system and reduce theaccumulation of residue.

Additionally yet, according to program instructions from the temperaturecontrol system 22 or the controller 80 or both, the temperature of theprocess chamber 10 can be set to a value less than the temperature ofthe gas heating device 45, i.e., the one or more heating elements. Forexample, the temperature can be a value less than approximately 200degrees C. Additionally, for example, the temperature can be a valueless than approximately 150 degrees C. Further yet, for example, thetemperature can range from approximately 80 degrees C. to approximately150 degrees C. However, the temperature may be the same or less than thetemperature of the gas distribution system 40. The temperature can beselected to be less than the temperature of the one or more resistivefilm heating elements, and to be sufficiently high to preventcondensation which may or may not cause film formation on surfaces ofthe process chamber and reduce the accumulation of residue.

Once film forming composition enters the process space 33, the filmforming composition adsorbs on the substrate surface, and film formingreactions proceed to produce a thin film on the substrate 25. Accordingto program instructions from the temperature control system 22 or thecontroller 80 or both, the substrate holder 20 is configured to set thetemperature of substrate 25 to a value less than the temperature of thegas heating device 45, the temperature of the gas distribution system40, and the process chamber 10. For example, the substrate temperaturecan range up to approximately 80 degrees C. Additionally, the substratetemperature can be approximately room temperature. For example, thesubstrate temperature can range up to approximately 25 degrees C.However, the temperature may be less than or greater than roomtemperature.

The substrate holder 20 may facilitate the modification and/orspatial/temporal control of the surface reactivity at the substrate orsubstrate holder, e.g., spatial and/or temporal adjustment of thesubstrate temperature.

The substrate holder 20 comprises one or more temperature controlelements 21 coupled to the temperature control system 22. Thetemperature control system 22 can include a substrate heating system, ora substrate cooling system, or both. For example, substrate holder 20can include a substrate heating element or substrate cooling element(not shown) beneath the surface of the substrate holder 20. Forinstance, the heating system or cooling system can include are-circulating fluid flow that receives heat from substrate holder 20and transfers heat to a heat exchanger system (not shown) when cooling,or transfers heat from the heat exchanger system to the substrate holder20 when heating. The cooling system or heating system may includeheating/cooling elements, such as resistive heating elements, orthermo-electric heaters/coolers located within substrate holder 20.Additionally, the heating elements or cooling elements or both can bearranged in more than one separately controlled temperature zone. Thesubstrate holder 20 may have two thermal zones, including an inner zoneand an outer zone. The temperatures of the zones may be controlled byheating or cooling the substrate holder thermal zones separately.

Additionally, the substrate holder 20 comprises a substrate clampingsystem 23 (e.g., electrical or mechanical clamping system) to clamp thesubstrate 25 to the upper surface of substrate holder 20. For example,substrate holder 20 may include an electrostatic chuck (ESC).

Furthermore, the substrate holder 20 can facilitate the delivery of heattransfer gas to the back-side of substrate 25 via a backside gas supplysystem 24 to improve the gas-gap thermal conductance between substrate25 and substrate holder 20. Such a system can be utilized whentemperature control of the substrate is required at elevated or reducedtemperatures. For example, the backside gas system can comprise atwo-zone gas distribution system, wherein the backside gas (e.g.,helium) pressure can be independently varied between the center and theedge of substrate 25.

As an example, the substrate holder may include any one of thetemperature controlling elements described in U.S. Pat. No. 6,740,853,entitled “Multi-zone Resistance Heater”, the entire content of which isincorporated herein in its entirety.

Vacuum pumping system 60 can include a turbo-molecular vacuum pump (TMP)capable of a pumping speed up to approximately 5000 liters per second(and greater) and a gate valve for throttling the chamber pressure. Forexample, a 1000 to 3000 liter per second TMP can be employed. TMPs canbe used for low pressure processing, typically less than approximately 1Torr. For high pressure processing (i.e., greater than approximately 1Torr), a mechanical booster pump and dry roughing pump can be used.Furthermore, a device for monitoring chamber pressure (not shown) can becoupled to the process chamber 10. The pressure monitoring device canbe, for example, a Type 628B Baratron absolute capacitance manometercommercially available from MKS Instruments, Inc. (Andover, Mass.).

Referring still to FIG. 1, the deposition system 1 can further comprisea controller 80 that comprises a microprocessor, memory, and a digitalI/O port capable of generating control voltages sufficient tocommunicate and activate inputs to deposition system 1 as well asmonitor outputs from deposition system 1. Moreover, controller 80 can becoupled to and can exchange information with the process chamber 10, thesubstrate holder 20, the temperature control system 22, the film formingcomposition delivery system 30, the gas distribution system 40, the gasheating device 45, and the vacuum pumping system 60, as well as thebackside gas delivery system (not shown), and/or the electrostaticclamping system (not shown). A program stored in the memory can beutilized to activate the inputs to the aforementioned components ofdeposition system 1 according to a process recipe in order to performthe method of depositing a thin film.

Controller 80 may be coupled to the one or more power sources 50 of gasheating device 45, and configured to control the electrical signal toeach of the plurality of heating element zones 55(A,B,C) of the heatingelement array 55. Therein, controller 80 may be configured to controlone or more electrical parameters including current, voltage, or power,or any combination of two or more thereof. Additionally, controller 80may be coupled to one or more flow control devices of the gasdistribution system 40, and configured to control the flow rate of filmforming composition or other process gas to each one of the plurality ofheating element zones 55(A,B,C) of the heating element array 55.Furthermore, controller 80 may be coupled to one or more temperaturecontrol elements in substrate holder 20, and configured to control thetemperature of different regions of substrate 25.

Controller 80 may be locally located relative to the deposition system1, or it may be remotely located relative to the deposition system 1 viaan internet or intranet. Thus, controller 80 can exchange data with thedeposition system 1 using at least one of a direct connection, anintranet, or the internet. Controller 80 may be coupled to an intranetat a customer site (i.e., a device maker, etc.), or coupled to anintranet at a vendor site (i.e., an equipment manufacturer).Furthermore, another computer (i.e., controller, server, etc.) canaccess controller 80 to exchange data via at least one of a directconnection, an intranet, or the internet.

The deposition system 1 can be periodically cleaned using an in-situcleaning system (not shown) coupled to, for example, the process chamber10 or the gas distribution system 40. Per a frequency determined by theoperator, the in-situ cleaning system can perform routine cleanings ofthe deposition system 1 in order to remove accumulated residue oninternal surfaces of deposition system 1. The in-situ cleaning systemcan, for example, comprise a radical generator configured to introduce achemical radical capable of chemically reacting and removing suchresidue. Additionally, for example, the in-situ cleaning system can, forexample, include an ozone generator configured to introduce a partialpressure of ozone. For instance, the radical generator can include anupstream plasma source configured to generate oxygen or fluorine radicalfrom oxygen (O₂), nitrogen trifluoride (NF₃), O₃, XeF₂, ClF₃, or C₃F₈(or, more generally, C_(x)F_(y)), respectively. The radical generatorcan include an ASTRON® reactive gas generator, commercially availablefrom MKS Instruments, Inc., ASTeX® Products (90 Industrial Way,Wilmington, Mass. 01887).

Referring now to FIG. 2, a gas distribution system 200 is illustratedaccording to an embodiment. The gas distribution system 200 comprises ahousing 240 configured to be coupled to or within a process chamber of adeposition system (such as process chamber 10 of deposition system 1 inFIG. 1), and a gas distribution plate 241 configured to be coupled tothe housing 240, wherein the combination form a plenum 242. The gasdistribution plate 241 may be optional. The gas distribution system 200may be thermally insulated from the process chamber, or it may not bethermally insulated from the process chamber.

The gas distribution system 200 is configured to receive a film formingcomposition into the plenum 242 from a film forming composition deliverysystem (not shown) and distribute the film forming composition in theprocess chamber. For example, the gas distribution system 200 can beconfigured to receive one or more constituents of a film formingcomposition 232 and an optional initiator 234 into plenum 242 from thefilm forming composition delivery system. The one or more constituentsof the film forming composition 232 and the optional initiator 234 maybe introduced to plenum 242 separately as shown, or they may beintroduced through the same opening. Alternatively, the gas distributionsystem 200 may be configured to receive a cleaning fluid, solution, gas,etc. into plenum 242, replacing the film forming composition 232 and/orthe optional initiator 234 when cleaning the deposition system, asdiscussed above in FIG. 1.

The gas distribution plate 241 comprises a plurality of openings 244arranged to introduce and distribute the film forming composition fromplenum 242 to a process space 233 proximate a substrate (not shown) uponwhich a film is to be formed. For example, gas distribution plate 241comprises one or more outlets 246 configured to face the upper surfaceof a substrate.

Furthermore, the gas distribution system 200 comprises a gas heatingdevice 250 having a heating element array with a plurality of heatingelement zones 252(A-C). Each of the plurality of heating element zones252(A-C) includes one or more heating elements coupled to a power source254, and configured to receive an electrical signal from the powersource 254. The plurality of heating element zones 252(A-C) are locatedat the outlet 246 of the gas distribution system 200, such that they mayinteract with any constituent of the film forming composition, or all ofthe constituents of the film forming composition including the optionalinitiator.

As described above, each of the plurality of heating element zones252(A-C) can comprise one or more resistive heating elements. Forexample, the one or more resistive heating elements may include ametal-containing ribbon or a metal-containing wire. Furthermore, forexample, the one or more resistive heating elements can be composed of aresistive metal, a resistive metal alloy, a resistive metal nitride, ora combination of two or more thereof.

When the power source 254 couples electrical power to the plurality ofheating element zones 252(A-C), the plurality of heating element zones252(A-C) may be elevated to a temperature sufficient to pyrolize one ormore constituents of the film forming composition. Power source 254 mayinclude a direct current (DC) power source, or it may include analternating current (AC) power source. Power source 254 may beconfigured to couple electrical power to the plurality of heatingelement zones 252(A-C) through a direct electrical connection to the oneor more heating elements. Alternatively, power source 254 may beconfigured to couple electrical power to the plurality of heatingelement zones 252(A-C) through induction.

The one or more openings 244 formed in gas distribution plate 241 caninclude one or more orifices or one or more slots or a combinationthereof. The one or more openings 244 can be distributed on the gasdistribution plate 241 in a rectilinear pattern. Alternatively, the oneor more openings 244 can be distributed on the gas distribution plate241 in a circular pattern (e.g., orifices are distributed in a radialdirection or angular direction or both). When the plurality of heatingelement zones 252(A-C) are located at the outlet 246 of the gasdistribution system 200, each heating element can be positioned suchthat the flow of film forming composition and/or the optional initiatorexiting from the one or more openings 244 of gas distribution plate 241pass by or over at least one heating element.

Additionally, the plurality of openings 244 can be distributed invarious density patterns on the gas distribution plate 241. For example,more openings can be formed near the center of the gas distributionplate 241 and fewer openings can be formed near the periphery of the gasdistribution plate 241. Alternatively, for example, more openings can beformed near the periphery of the gas distribution plate 241 and feweropenings can be formed near the center of the gas distribution plate241. Additionally yet, the size of the openings can vary on the gasdistribution plate 241. For example, larger openings can be formed nearthe center of the gas distribution plate 241 and smaller openings can beformed near the periphery of the gas distribution plate 241.Alternatively, for example, smaller openings can be formed near theperiphery of the gas distribution plate 241 and larger openings can beformed near the center of the gas distribution plate 241.

Referring still to FIG. 2, the gas distribution system 200 may comprisean intermediate gas distribution plate 260 coupled to housing 240 suchthat the combination of housing 240, intermediate gas distribution plate260 and gas distribution plate 241 form an intermediate plenum 245separate from plenum 242 and between the intermediate gas distributionplate 260 and the gas distribution plate 241. The intermediate gasdistribution plate 260 may be optional. The gas distribution system 200is configured to receive a film forming composition into the plenum 242from a film forming composition delivery system (not shown) anddistribute the film forming composition through the intermediate plenum245 to the process chamber.

The intermediate gas distribution plate 260 comprises a plurality ofopenings 262 arranged to distribute and introduce the film formingcomposition to the intermediate plenum 245. The plurality of openings262 can be shaped, arranged, distributed or sized as described above.The openings 262 in the intermediate gas distribution plate 260 may ormay not be aligned with the plurality of heating element zones 252(A-C).

The gas distribution system 200 may further comprise a gas distributionmanifold 270 coupled to housing 240 such that the combination of housing240 and gas distribution manifold 270 form a second intermediate plenum243 separate from plenum 242 and between the intermediate gasdistribution plate 260 and the gas distribution manifold 270. The gasdistribution system 200 is configured to receive a film formingcomposition into the plenum 242 from a film forming composition deliverysystem (not shown) and distribute the film forming composition throughthe second intermediate plenum 243 and the intermediate plenum 245 tothe process chamber. The gas distribution manifold 270 comprises a oneor more conduits 272 configured to distribute and introduce the filmforming composition to the second intermediate plenum 243 through anannular groove 274. The gas distribution manifold 270 may be optional.

Referring now to FIG. 3A, a schematic cross-sectional view of adeposition system 1001 is depicted according to another embodiment. Thedeposition system 1001 comprises a substrate holder 1020 configured tosupport a substrate 1025, upon which the thin film is formed.Furthermore, the substrate holder is configured to control thetemperature of the substrate at a temperature suitable for the filmforming reactions. The deposition system 1001 further comprises a filmforming composition delivery system 1030 configured to introduce a filmforming composition to the substrate 1025 through a gas distributionsystem 1040. Further yet, the deposition system 1001 comprises a gasheating device 1045 coupled to or mounted downstream from the gasdistribution system 1040 and configured to chemically modify the filmforming composition.

The gas heating device 1045 comprises a heating element array 1055having a plurality of heating element zones 1055(A,B,C) configured toreceive a flow of a film forming composition from the film formingcomposition delivery system 1030 and the gas distribution system 1040across or through the plurality of heating element zones 1055(A,B,C) inorder cause pyrolysis of one or more constituents of the film formingcomposition when heated. Each of the plurality of heating element zones1055(A,B,C) comprises one or more heating elements, and is configuredelectrically independent of one another, wherein each of the pluralityof heating element zones is arranged to interact with at least a portionof the flow, and affect pyrolysis of and delivery of the film formingcomposition to different regions of the substrate 25.

One or more power sources 1050 are coupled to the gas heating device1045, and configured to provide an electrical signal to each of theplurality of heating element zones 1055(A,B,C) of heating element array1055. For example, each of the plurality of heating element zones 1055(A,B,C) of heating element array 1055 can comprise one or more resistiveheating elements. When electrical current flows through and effectsheating of the one or more resistive heating elements, the interactionof these heated elements with the film forming composition causespyrolysis of one or more constituents of the film forming composition.As shown in FIG. 3A, the one or more heating elements for each of theplurality of heating element zones 1055(A,B,C) may be arranged in aplane, i.e., planar arrangement. Alternatively, the one or more heatingelements for each of the plurality of heating element zones 1055(A,B,C)may not be arranged in a plane, i.e., non-planar arrangement.

As shown in FIG. 3A, the plurality of heating element zones 1055 (A,B,C)in the heating element array 1055 may be arranged within a plane 1034substantially parallel with substrate 1025 and spaced away fromsubstrate 1025 a distance 1035. Therein, a flow of film formingcomposition enters the deposition system 1001 through gas distributionsystem 1040, flows through heating element array 1055 into process space1033, and flows downward through process space 1033 to substrate 1025 ina direction substantially normal to substrate 1025, i.e. a stagnationflow pattern. At least a portion of the flow of the film formingcomposition flows through each of the plurality of the heating elementzones 1055(A,B,C). The gas distribution system 1040 may be zoned in amanner such that an amount of film forming composition flowing to eachof the plurality of heating element zones 1055 (A,B,C) is controllable.

The plurality of heating element zones 1055(A,B,C) correspond todifferent process regions 1033(A-C) of the substrate 1025, respectively.For example, heating element zone 1055A may correspond to process region1033A located at a substantially central region of substrate 1025.Additionally, for example, heating element zones 1055B and 1055C maycorrespond to process regions 1033B and 1033C, respectively, located ata substantially edge or peripheral region of substrate 1025. Therefore,independent control of each of the plurality of heating element zones1055(A-C) and/or control of the amount of film forming compositiondirected to each of the plurality of heating element zones 1055(A-C) maybe used to control processing parameters in each of the process regions1033(A-C).

Corresponding to the plurality of heating element zones 1055(A-C), thesubstrate holder 1020 may comprise a plurality of temperature controlzones for controlling a temperature of substrate 1025. The temperaturecontrol zones may align with process regions 1033(A-C) and/or theplurality of heating element zones 1055(A-C).

For example, the substrate holder 1020 may comprise one or moretemperature control elements 1022(A-C) coupled to a temperature controlsystem 1022 and corresponding to the plurality of temperature controlzones for substrate 1025. The temperature control system 1022 caninclude a substrate heating system, or a substrate cooling system, orboth. For example, temperature control elements 1022(A-C) may includesubstrate heating elements and/or substrate cooling elements embeddedwithin the substrate holder 1020. The temperature control elements1022(A-C) may correspond to the plurality of temperature control zonesfor substrate 1025 and the process regions 1033(A-C). The temperaturesof each region of substrate holder 1020 may be controlled by heating orcooling each region in the substrate holder 1025.

Additionally, for example, the substrate holder 1020 may comprise asubstrate clamping system 1023A (e.g., electrical or mechanical clampingsystem) to clamp the substrate 1025 to the upper surface of substrateholder 1020. For example, substrate holder 1020 may include anelectrostatic chuck (ESC). An ESC control system 1023 may be utilized tooperate and control substrate clamping system 1023A.

Furthermore, for example, the substrate holder 1020 may facilitate thedelivery of heat transfer gas to the back-side of substrate 1025 via abackside gas supply system 1024 to improve the gas-gap thermalconductance between substrate 1025 and substrate holder 1020. Such asystem can be utilized when temperature control of the substrate isrequired at elevated or reduced temperatures. As shown in FIG. 3A, thebackside gas supply system 1024 may comprise one or more heat transfergas supply zones 1024(A-C) to controllably adjust heat transfer at theplurality of temperature control zones for controlling the temperatureof substrate 1025. The heat transfer gas supply zones 1024(A-C) maycorrespond to the plurality of heating element zones 1055(A-C) and theprocess regions 1033(A-C). The temperatures of each region of substrate1025 may be controlled by independently varying the backside (e.g.,helium, He) pressure at each of the heat transfer gas supply zones1024(A-C).

Referring still to FIG. 3A, a controller 1080 is coupled to the filmforming composition delivery system 1030, the one or more power sources1050, the temperature control system 1022, the ESC control system 1023,and/or the backside gas supply system 1024 to perform at least one ofmonitoring, adjusting, or controlling a processing parameter atdifferent regions of substrate 1025. For example, one or more of theaforementioned elements may be used to control film depositionuniformity on substrate 1025.

Referring now to FIG. 3B, a schematic cross-sectional view of adeposition system 2001 is depicted according to another embodiment. Thedeposition system 2001 comprises a gas heating device 2045 coupled to ormounted downstream from the gas distribution system 1040 and configuredto chemically modify the film forming composition. The gas heatingdevice 2045 comprises a heating element array 2055 having a plurality ofheating element zones 2055(A,B,C).

Each of the plurality of heating element zones 2055(A,B,C) of heatingelement array 2055 can comprise one or more resistive heating elements.When electrical current flows through and effects heating of the one ormore resistive heating elements, the interaction of these heatedelements with the film forming composition causes pyrolysis of one ormore constituents of the film forming composition. As shown in FIG. 3B,the one or more heating elements for each of the plurality of heatingelement zones 2055(A,B,C) may be arranged in a plane, i.e., planararrangement. Alternatively, the one or more heating elements for each ofthe plurality of heating element zones 2055(A,B,C) may not be arrangedin a plane, i.e., non-planar arrangement.

As shown in FIG. 3B, at least one of the plurality of heating elementzones 2055(A,B,C) in the heating element array 2055 may be arrangedwithin a first plane 2034A, while at least another of the plurality ofheating element zones 2055(A,B,C) in the heating element array 2055 maybe arranged within a second plane 2034B. The first and second planes2034A, 2034B may be substantially parallel with substrate 1025 andspaced away from substrate 1025 a distance 2035A, 2035B, respectively.However, the first plane 2034A and/or the second plane 2034B need not beoriented parallel with substrate 1025. Therein, a flow of film formingcomposition enters the deposition system 2001 through gas distributionsystem 1040, flows through heating element array 2055 into process space1033, and flows downward through process space 1033 to substrate 1025 ina direction substantially normal to substrate 1025, i.e. a stagnationflow pattern.

The plurality of heating element zones 2055(A,B,C) correspond todifferent process regions 1033(A-C) of the substrate 1025, respectively.For example, heating element zone 2055A may correspond to process region1033A located at a substantially central region of substrate 1025.Additionally, for example, heating element zones 2055B and 2055C maycorrespond to process regions 1033B and 1033C, respectively, located ata substantially edge or peripheral region of substrate 1025. By varyingthe location of the first plane 2034A and the second plane 2034B, thedistances 2035A and 2035B, respectively, between the reaction zone ateach of the plurality of heating element zones 2055(A-C) and substrate1025 may be varied to provide additional control of the processingparameters at each of the process regions 1033(A-C).

Referring now to FIG. 3C, a schematic cross-sectional view of adeposition system 3001 is depicted according to another embodiment. Thedeposition system 3001 comprises a gas heating device 3045 coupled to ormounted downstream from the gas distribution system 1040 and configuredto chemically modify the film forming composition. The gas heatingdevice 3045 comprises a heating element array 3055 having a plurality ofheating element zones 3055(A,B,C).

As shown in FIG. 3C, a position of at least one of the plurality ofheating element zones 3055(A,B,C) in the heating element array 3055 maybe adjusted via a positioning system 3060. For example, at least one ofthe plurality of heating element zones 3055(A,B,C) in the heatingelement array 3055 may be arranged within a first plane 3034A, while atleast another of the plurality of heating element zones 3055(A,B,C) inthe heating element array 3055 may be arranged within a second plane3034B. The first and second planes 3034A, 3034B may be substantiallyparallel with substrate 1025 and spaced away from substrate 1025 adistance 3035A, 3035B, respectively. However, the first plane 3034Aand/or the second plane 3034B need not be oriented parallel withsubstrate 1025. Therein, a flow of film forming composition enters thedeposition system 3001 through gas distribution system 1040, flowsthrough heating element array 3055 into process space 1033, and flowsdownward through process space 1033 to substrate 1025 in a directionsubstantially normal to substrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 3055(A,B,C) correspond todifferent process regions 1033(A-C) of the substrate 1025, respectively.For example, heating element zone 3055A may correspond to process region1033A located at a substantially central region of substrate 1025.Additionally, for example, heating element zones 3055B and 3055C maycorrespond to process regions 1033B and 1033C, respectively, located ata substantially edge or peripheral region of substrate 1025. By varyingthe location of the first plane 3034A and the second plane 3034B, thedistances 3035A and 3035B, respectively, between the reaction zone ateach of the plurality of heating element zones 3055(A-C) and substrate1025 may be varied to provide additional control of the processingparameters at each of the process regions 1033(A-C).

The positioning system 3060, via input from controller 1080 for example,may adjust the position of any one or more of the plurality of heatingelement zones 3055(A-C) in process space 1033. The position of each ofthe plurality of heating element zones 3055(A-C) may be adjusted via anytranslational and/or rotational degree of freedom. For example, theposition of each of the plurality of heating element zones 3055(A-C) maybe adjusted relative to substrate 1025.

Referring now to FIG. 3D, a schematic cross-sectional view of adeposition system 4001 is depicted according to another embodiment. Thedeposition system 4001 comprises a gas heating device 4045 coupled to ormounted downstream from the gas distribution system 1040 and configuredto chemically modify the film forming composition. The gas heatingdevice 4045 comprises a heating element array 4055 having a plurality ofheating element zones 4055(A,B,C).

Each of the plurality of heating element zones 4055(A,B,C) of heatingelement array 4055 can comprise one or more resistive heating elements.When electrical current flows through and effects heating of the one ormore resistive heating elements, the interaction of these heatedelements with the film forming composition causes pyrolysis of one ormore constituents of the film forming composition. As shown in FIG. 3D,the one or more heating elements for each of the plurality of heatingelement zones 4055(A,B,C) may be arranged in a plane, i.e., planararrangement. Alternatively, the one or more heating elements for each ofthe plurality of heating element zones 4055(A,B,C) may not be arrangedin a plane, i.e., non-planar arrangement.

As shown in FIG. 3D, at least one of the plurality of heating elementzones 4055(A,B,C) in the heating element array 4055 may be orienteddifferently relative to substrate 1035 than that of another of theplurality of heating element zones 4055(A,B,C) in the heating elementarray 4055. For example, heating elements zones 4055C and 4055B aretilted relative to heating element 4055A and substrate 1025. Otherconfigurations, orientations, and/or arrangements are contemplated.

Additionally, as shown in FIG. 3D, at least one of the plurality ofheating element zones 4055(A,B,C) in the heating element array 4055 maybe arranged within a first plane 4034A, while at least another of theplurality of heating element zones 4055(A,B,C) in the heating elementarray 4055 may be arranged or centered within a second plane 4034B. Thefirst and second planes 4034A, 4034B may be substantially parallel withsubstrate 1025 and spaced away from substrate 1025 a distance 4035A,4035B, respectively. However, the first plane 4034A and/or the secondplane 4034B need not be oriented parallel with substrate 1025, as shown.Therein, a flow of film forming composition enters the deposition system4001 through gas distribution system 1040, flows through heating elementarray 4055 into process space 1033, and flows downward through processspace 1033 to substrate 1025 in a direction substantially normal tosubstrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 4055(A,B,C) correspond todifferent process regions 1033(A-C) of the substrate 1025, respectively.For example, heating element zone 4055A may correspond to process region1033A located at a substantially central region of substrate 1025.Additionally, for example, heating element zones 4055B and 4055C maycorrespond to process regions 1033B and 1033C, respectively, located ata substantially edge or peripheral region of substrate 1025. By varyingthe location of the first plane 4034A and the second plane 4034B and/orthe orientation of the heating element zones 4055(A,B,C), the distances4035A and 4035B, respectively, between the reaction zone at each of theplurality of heating element zones 4055(A-C) and substrate 1025 may bevaried to provide additional control of the processing parameters ateach of the process regions 1033(A-C).

Referring now to FIG. 3E, a schematic cross-sectional view of adeposition system 5001 is depicted according to another embodiment. Thedeposition system 5001 comprises a gas heating device 5045 coupled to ormounted downstream from the gas distribution system 1040 and configuredto chemically modify the film forming composition. The gas heatingdevice 5045 comprises a heating element array 5055 having a plurality ofheating element zones 5055(A,B,C).

Each of the plurality of heating element zones 5055(A,B,C) of heatingelement array 5055 can comprise one or more resistive heating elements.When electrical current flows through and effects heating of the one ormore resistive heating elements, the interaction of these heatedelements with the film forming composition causes pyrolysis of one ormore constituents of the film forming composition. As shown in FIG. 3E,the one or more heating elements for each of the plurality of heatingelement zones 5055(A,B,C) may not be arranged in a plane, i.e.,non-planar arrangement. Alternatively, the one or more heating elementsfor each of the plurality of heating element zones 5055(A,B,C) may bearranged in a plane, i.e., planar arrangement.

As shown in FIG. 3E, at least one of the plurality of heating elementzones 5055(A,B,C) in the heating element array 5055 may be orienteddifferently relative to substrate 1035 than that of another of theplurality of heating element zones 5055(A,B,C) in the heating elementarray 5055. For example, heating elements zones 5055C and 5055B aretilted relative to heating element 5055A and substrate 1025. Otherconfigurations, orientations, and/or arrangements are contemplated.

Additionally, as shown in FIG. 3E, at least one of the plurality ofheating element zones 5055(A,B,C) in the heating element array 5055 maybe shaped differently than that of another of the plurality of heatingelement zones 5055(A,B,C) in the heating element array 5055. Forexample, heating elements zones 5055C and 5055B include one or moreresistive heating elements arranged on a non-planar, three-dimensionalsurface relative to heating element 5055A and substrate 1025, i.e.,non-planar arrangement. Other shapes, configurations, orientations,and/or arrangements are contemplated.

Furthermore, as shown in FIG. 3E, at least one of the plurality ofheating element zones 5055(A,B,C) in the heating element array 5055 maybe arranged within a first plane 4034A, while at least another of theplurality of heating element zones 5055(A,B,C) in the heating elementarray 5055 may be arranged or centered within a second plane 5034B. Thefirst and second planes 5034A, 5034B may be substantially parallel withsubstrate 1025 and spaced away from substrate 1025 a distance 5035A,5035B, respectively. However, the first plane 5034A and/or the secondplane 5034B need not be oriented parallel with substrate 1025, as shown.Therein, a flow of film forming composition enters the deposition system5001 through gas distribution system 1040, flows through heating elementarray 5055 into process space 1033, and flows downward through processspace 1033 to substrate 1025 in a direction substantially normal tosubstrate 1025, i.e. a stagnation flow pattern.

The plurality of heating element zones 5055(A,B,C) correspond todifferent process regions 1033(A-C) of the substrate 1025, respectively.For example, heating element zone 5055A may correspond to process region1033A located at a substantially central region of substrate 1025.Additionally, for example, heating element zones 5055B and 5055C maycorrespond to process regions 1033B and 1033C, respectively, located ata substantially edge or peripheral region of substrate 1025. By varyingthe location of the first plane 5034A and the second plane 5034B and/orthe orientation of the heating element zones 5055(A,B,C), the distances5035A and 5035B, respectively, between the reaction zone at each of theplurality of heating element zones 5055(A-C) and substrate 1025 may bevaried to provide additional control of the processing parameters ateach of the process regions 1033(A-C).

Although several embodiments are provided, other shapes, configurations,orientations, and/or arrangements are contemplated. Thelocation/spacing, orientation, and/or shape of the heating element zonesmay depend on the type of substrate being processed. For example, thesubstrate may include a circular substrate or semiconductor wafer.Alternatively, other substrates and configurations may be used. Forexample, rectangular substrates, such as large glass substrates orliquid crystal displays (LCDs), may be processed in either a horizontalor vertical arrangement within the processing space. In yet anotherarrangement, a flexible substrate may be processed by runningroller-to-roller in a known manner where the substrate holder may beconfigured as a roller.

Referring now to FIG. 4, a top view of a gas heating device 300 ispresented according to an embodiment. The gas heating device 300 isconfigured to heat one or more constituents of a film formingcomposition. The gas heating device 300 comprises a heating elementarray 340 having a plurality of heating element zones 340(A-C), each ofwhich is electrically independent of one another. Each of the pluralityof heating element zones comprises one or more heat sources 320, whereineach heat source 320 comprises a resistive heating element 330configured to receive an electrical current from one or more powersources. Additionally, the gas heating device 300 comprises a mountingstructure 310 configured to support the one or more resistive heatingelements 330. Furthermore, the one or more heat sources 320 may bemounted between the mounting structure 310 and an auxiliary mountingstructure 312 (see FIG. 5B). Mounting structure 310 may include a singlestructure for all of the heating element zones 340(A-C). Alternatively,mounting structure 310 may include multiple structures independentlyarranged for each heating element zone 340(A-C).

As shown in FIG. 4, the gas heating device 300 comprises one or morestatic mounting devices 326 coupled to the mounting structure 310 andconfigured to fixedly couple the one or more resistive heating elements330 to the mounting structure 310, and the gas heating device 300comprises one or more dynamic mounting devices 324 coupled to themounting structure 310 and configured to automatically compensate forchanges in a length of each of the one or more resistive heatingelements 330. Further yet, the one or more dynamic mounting devices 324may substantially reduce slippage between the one or more resistiveheating elements 330 and the one or more dynamic mounting devices 324.

The one or more resistive heating elements 330 may be electricallycoupled in series, as shown in FIG. 4, using electrical interconnects342, wherein electrical current is supplied to the serial connection ofone or more resistive heating elements 330 via, for example, connectionof a first terminal 341(A-C) to the power source and a second terminal344(A-C) to electrical ground for the power source. Alternatively, theone or more resistive heating elements 330 may be electrically coupledin parallel.

Referring now to FIGS. 5A and 5B, a top view and a side view of heatsource 320, respectively, is presented according to an embodiment. Theresistive heating element 330 comprises a first end 334 fixedly coupledto one of the one or more static mounting devices 326, a second end 336fixedly coupled to one of the one or more static mounting devices 326, abend 333 coupled to one of the one or more dynamic mounting devices 324and located between the first end 334 and the second end 336, a firststraight section 332 extending between the first end 334 and the bend333, and a second straight section 331 extending between the second end336 and the bend 333. The first end 334 and the second end 336 may befixedly coupled to the same static mounting device or different staticmounting devices.

As illustrated in FIGS. 5A and 5B, the first straight section 332 andthe second straight section 331 may be substantially the same length.When the first straight section 332 and the second straight section 331are substantially the same length, the respective changes in length forthe first straight section 332 and the second straight section 331 dueto temperature variations are substantially the same. Alternatively, thefirst straight section 332 and the second straight section 331 may bedifferent lengths.

Also, as illustrated in FIGS. 5A and 5B, the bend 333 comprises a 180degree bend. Alternatively, the bend 333 comprises a bend ranging fromgreater than 0 degrees to less than 360 degrees.

The static mounting device 326 is fixedly coupled to the mountingstructure 310. The dynamic mounting device 324 is configured to adjustin a linear direction 325 parallel with the first straight section 332and the second straight section 331 in order to compensate for changesin the length of the first straight section 332 and the length of thesecond straight section 331. In this embodiment, the dynamic mountingdevice 324 can alleviate slack or sagging in the resistive heatingelement 330, and it may substantially reduce or minimize slippagebetween the resistive heating element 330 and the dynamic mountingdevice 324 (such slippage may cause particle generation and/orcontamination). Furthermore, the dynamic mounting device 324 comprises athermal break 327 configured to reduce heat transfer between the dynamicmounting device 324 and the mounting structure 310.

Referring now to FIGS. 6A, 6B, 6C, and 6D, a top view, a side view, across-sectional view, and a perspective view of the dynamic mountingdevice 324, respectively, is presented according to an embodiment. Thedynamic mounting device 324 comprises a static structure 350 fixedlycoupled to the mounting structure 310. The static structure 350 includesa guide feature 352 and a helical spring 370 configured to be receivedby the guide feature 352 of the static structure 350. The dynamicmounting device 324 further comprises a dynamic structure 360dynamically coupled to the mounting structure 310. The dynamic structure360 comprises a capture member 362 configured to retain at least one ofthe one or more resistive heating elements 330, a slidable member 363configured to slidably mate with the static structure 350 and compressthe helical spring 370 against the static structure 350 when loaded withthe at least one of the one or more resistive heating elements 330, andthe thermal break 327 disposed between the capture member 362 and theslidable member 363. The restoring force of the helical spring 370 maymaintain the resistive heating element 330 under tensile stress and/oralleviate the resistive heating element 330 from slack or sagging.

As shown in FIG. 6A, the slidable member 363 comprises a load member 364having a load surface 364′ configured to contact the helical spring 370and a pair of guide rail members 366 extending from the load member 364,wherein each of the pair of guide rail members 366 extend on oppositesides of the static structure 350 and having guide surfaces parallelwith opposing faces of the static structure 350. Moreover, the mountingstructure 310 may comprise a groove 314 configured to receive the baseof the dynamic structure 360 and further guide its motion.

As shown in FIG. 6B, the capture member 362 comprises a shaped surface362′ configured to contact bend (not shown) of the resistive heatingelement 330. Additionally, the capture member 362 comprises a lip 362″configured to prevent the resistive heating element 330 from slippingoff of the capture member 362.

Referring again to FIGS. 5A and 5B, the static mounting device 326, thedynamic mounting device 324, or both the static mounting device 326 andthe dynamic mounting device 324 may be fabricated from an electricallynon-conductive or insulating material. Additionally, the static mountingdevice 326, the dynamic mounting device 324, or both the static mountingdevice 326 and the dynamic mounting device 324 may be fabricated from athermally insulating material. Furthermore, the static mounting device326, the dynamic mounting device 324, or both the static mounting device326 and the dynamic mounting device 324 may be fabricated from a ceramicor a plastic. Further yet, for example, the static mounting device 326,the dynamic mounting device 324, or both the static mounting device 326and the dynamic mounting device 324 may be fabricated from quartz,silicon nitride, silicon carbide, sapphire, alumina, aluminum nitride,polytetrafluoroethylene, polyimide, etc.

The static structure 350, the dynamic structure 360, or both the staticstructure 350 and the dynamic structure 360 may be fabricated from anelectrically non-conductive or insulating material. Additionally, thestatic structure 350, the dynamic structure 360, or both the staticstructure 350 and the dynamic structure 360 may be fabricated from athermally insulating material. Furthermore, the static structure 350,the dynamic structure 360, or both the static structure 350 and thedynamic structure 360 may be fabricated from a ceramic or a plastic.Further yet, for example, the static structure 350, the dynamicstructure 360, or both the static structure 350 and the dynamicstructure 360 may be fabricated from quartz, silicon nitride, siliconcarbide, sapphire, alumina, aluminum nitride, polytetrafluoroethylene,polyimide, etc.

As shown in FIGS. 6A, 6B, and 6C, a cross-sectional view of the thermalbreak 327 is provided. The thermal break 327 comprises one or more arms329 extending between the slidable member 363 and the capture member362. For example, the one or more arms 329 may include two reducedcross-sectional area arms extending from the pair of guide rail members366 of slidable member 363 to the capture member 362. Thecross-sectional dimensions, 329 a (width) and 329 b (height), and thelength, 329 c, of the thermal break 327 may be selected to reduce orminimize the heat transfer coefficient (h) between the capture member362 and the slidable member 363, wherein h=kA/I (k represents thethermal conductivity of the thermal break, A represents thecross-sectional area of the thermal break, and I represents the lengthof the thermal break). Additionally, the cross-sectional dimensions, 329a (width) and 329 b (height), may be selected to maintain the mechanicalintegrity of the thermal break 327. The cross-sectional shape of thethermal break 327, e.g., each of the one or more arms 329, may besquare, rectangular, triangular, circular, or any arbitrary shape.

According to one embodiment, the width (329 a) of the thermal break 327may range from about 0.5 mm (millimeter) to about 10 mm. According toanother embodiment, the width (329 a) of the thermal break 327 may rangefrom about 1 mm to about 5 mm. According to another embodiment, thewidth (329 a) of the thermal break 327 may range from about 2 mm toabout 5 mm. According to yet another embodiment, the width (329 a) ofthe thermal break 327 may range from about 3 mm to about 4 mm.

According to one embodiment, the height (329 b) of the thermal break 327may range from about 0.5 mm (millimeter) to about 10 mm. According toanother embodiment, the height (329 b) of the thermal break 327 mayrange from about 1 mm to about 5 mm. According to another embodiment,the height (329 b) of the thermal break 327 may range from about 2 mm toabout 5 mm. According to yet another embodiment, the height (329 b) ofthe thermal break 327 may range from about 3 mm to about 4 mm.

According to one embodiment, the length (329 c) of the thermal break 327may range from about 0.1 cm (centimeter) to about 5 cm. According toanother embodiment, the length (329 c) of the thermal break 327 mayrange from about 0.5 cm to about 2 cm. According to another embodiment,the length (329 c) of the thermal break 327 may range from about 0.5 cmto about 1.5 cm. According to yet another embodiment, the length (329 c)of the thermal break 327 may range from about 0.5 cm to about 1 cm.

According to one embodiment, the thermal break 327 comprises dimensionssuch that a heat transfer coefficient of the thermal break 327 is about0.1 W/m-K (Watts per meter-Kelvin) or less. According to anotherembodiment, the thermal break 327 comprises dimensions such that a heattransfer coefficient of the thermal break 327 is about 0.05 W/m-K orless. According to another embodiment, the thermal break 327 comprisesdimensions such that a heat transfer coefficient of the thermal break327 is about 0.04 W/m-K or less. According to another embodiment, thethermal break 327 comprises dimensions such that a heat transfercoefficient of the thermal break 327 is about 0.03 W/m-K or less.According to another embodiment, the thermal break 327 comprisesdimensions such that a heat transfer coefficient of the thermal break327 is about 0.02 W/m-K or less. According to yet another embodiment,the thermal break 327 comprises dimensions such that a heat transfercoefficient of the thermal break 327 is about 0.01 W/m-K or less.

Referring now to FIG. 7, a top view of a heat source 420 is presentedaccording to another embodiment. The heat source 420 comprises aresistive heating element 430 following a serpentine-like path thatweaves through a plurality of dynamic structures (424, 424′, and 424″)coupled to a mounting structure 410 and configured to move in directions(425, 425′, and 425″), respectively. For example, the serpentine-likepath may comprise substantially straight sections interconnected bybends 433. One end of the serpentine-like path may be connected to apower source, while the opposing end of the serpentine-like path may beconnected to the electrical ground for the power source. In thisembodiment, the plurality of dynamic mounting devices (424, 424′, and424″) can alleviate slack or sagging in the resistive heating element430, and they may substantially reduce or minimize slippage between theresistive heating element 430 and the dynamic mounting devices 424 (suchslippage may cause particle generation and/or contamination).

Although the gas heating device has been described for use in adeposition system, the gas heating device may be used in any systemrequiring gas heating of a process component, such as a film formingcomposition. Other systems in semiconductor manufacturing and integratedcircuit (IC) manufacturing may include etching systems, thermalprocessing systems, etc.

FIG. 8 illustrates a method of depositing a thin film on a substrateaccording to another embodiment. The method 700 includes, at 710,coupling a gas heating device comprising a plurality of heating elementzones to a process chamber for a deposition system, wherein each heatingelement zones of the gas heating device comprises one or more resistiveheating elements and a mounting structure configure to support the oneor more resistive elements.

In 720, a temperature of the one or more resistive heating elements ineach of the plurality of heating element zones is elevated. For example,the temperature may be elevated by flowing electrical current throughthe one or more resistive heating elements.

In 730, a change in the length of the one or more resistive heatingelements in each of the plurality of heating element zones isautomatically compensated by one or more dynamic mounting devicescoupled to the mounting structure. For example, the compensation for thechange in element length may be performed while substantially reducingslippage between the one or more resistive heating elements and thedynamic mounting device. Furthermore, each of the one or more dynamicmounting devices includes a thermal break to reduce heat transferbetween the one or more resistive heating elements and the mountingstructure.

In 740, a substrate is provided in the process chamber of the depositionsystem. For example, the deposition system can include the depositionsystem described above in FIG. 1. The substrate can, for example, be aSi substrate. A Si substrate can include n- or p-type material,depending on the type of device being formed. The substrate can be ofany size or shape, for example a 200 mm substrate, a 300 mm substrate,or an even larger substrate. According to an embodiment of theinvention, the substrate can be a patterned substrate containing one ormore vias or trenches, or combinations thereof.

In 750, a film forming composition is provided to a gas distributionsystem that is configured to introduce the film forming composition tothe process chamber above the substrate. For example, the gasdistribution system can be located above the substrate and opposing anupper surface of the substrate.

In 760, one or more constituents of the film forming composition aresubjected to pyrolysis using the gas heating device. The gas heatingdevice can be any one of the systems described in FIGS. 2 through 6above, or any combination thereof.

In 770, the substrate is exposed to the film forming composition tofacilitate the formation of the thin film. The temperature of thesubstrate can be set to a value less than the temperature of the one ormore heating elements, e.g. one or more resistive film heating elements.For example, the temperature of the substrate can be approximately roomtemperature.

FIG. 9 illustrates a method of depositing a thin film on a substrateaccording to another embodiment. The method 800 includes, at 810,disposing a gas heating device comprising a plurality of heating elementzones to a process chamber for a deposition system, wherein each heatingelement zones of the gas heating device comprises one or more resistiveheating elements and a mounting structure configure to support the oneor more resistive elements.

The method may further comprise spacing each of the plurality of heatingelement zones from the substrate to control a diffusion path lengthbetween a reaction zone at each of the plurality of heating elementzones to a surface of the substrate. For example, the method maycomprise differentially spacing each of the plurality of heating elementzones from the substrate to control a diffusion path length between areaction zone at each of the plurality of heating element zones to asurface of the substrate. Alternatively or additionally, the method mayfurther comprise differentially orienting each of the plurality ofheating element zones relative to the substrate to control a diffusionpath length between a reaction zone at each of the plurality of heatingelement zones and a surface of the substrate. Further yet, the methodmay include adjusting the position and/or orientation of at least one ofthe plurality of heating element zones.

In 820, a temperature of each of the plurality of heating element zonesis independently controlled. For example, the temperature each one ofthe plurality of heating element zones may be controlled by controllablyadjusting an electrical signal coupled to each one of the plurality ofheating element zones. The electrical signal may include a power, avoltage, or a current, or any combination of two or more thereof. Themethod may comprise temporally modulating or pulsing the power to atleast one of the plurality of heating element zones.

In 830, a substrate is provided in the process chamber of the depositionsystem. For example, the deposition system can include the depositionsystem described above in FIGS. 1, 3A, 3B, 3C, 3D, and 3E. The substratecan, for example, be a Si substrate. A Si substrate can include n- orp-type material, depending on the type of device being formed. Thesubstrate can be of any size or shape, for example a 200 mm substrate, a300 mm substrate, or an even larger substrate. According to anembodiment of the invention, the substrate can be a patterned substratecontaining one or more vias or trenches, or combinations thereof. Themethod may include adjusting a position of the substrate holder relativeto the plurality of heating element zones relative to the substrate.

The substrate holder comprises one or more temperature control zones forcontrolling a temperature of the substrate. The one or more temperaturecontrol zones may correspond to each of the plurality of heating elementzones. The one or more temperature control zones may include one or moretemperature control elements embedded in the substrate holder forheating and/or cooling different regions of the substrate holder, and/orone or more heat transfer gas supply zones for supplying a heat transfergas to different regions at a backside of the substrate.

In 840, a temperature of the substrate is independently controlled atthe one or more temperature control zones. Further, the temperature ofthe substrate may be temporally modulated for at least one of the one ormore temperature control zones.

In 850, a film forming composition is provided to a gas distributionsystem that is configured to introduce the film forming composition tothe process chamber above the substrate. For example, the gasdistribution system can be located above the substrate and opposing anupper surface of the substrate. The method may further compriseindependently controlling a flow rate of the film forming composition toeach of the plurality of heating element zones. Further yet, the methodmay comprise temporally modulating or pulsing the flow rate to at leastone of the plurality of heating element zones.

In 860, one or more constituents of the film forming composition aresubjected to pyrolysis using the gas heating device. The gas heatingdevice can be any one of the systems described in FIGS. 1 through 7above, or any combination thereof.

In 870, the substrate is exposed to the film forming composition tofacilitate the formation of the thin film. The temperature of thesubstrate can be set to a value less than the temperature of the one ormore heating elements, e.g. one or more resistive film heating elements.For example, the temperature of the substrate can be approximately roomtemperature.

Although only certain embodiments of this invention have been describedin detail above, those skilled in the art will readily appreciate thatmany modifications are possible in the embodiments without materiallydeparting from the novel teachings and advantages of this invention.Accordingly, all such modifications are intended to be included withinthe scope of this invention.

1. A gas heating device for use in a deposition system, comprising: aheating element array having a plurality of heating element zonesconfigured to receive a flow of a film forming composition across orthrough said plurality of heating element zones in order to causepyrolysis of one or more constituents of said film forming compositionwhen heated, each of said plurality of heating element zones comprisesone or more resistive heating elements, wherein each of said pluralityof heating element zones is configured electrically independent of oneanother, and wherein each of said plurality of heating element zones isarranged to interact with at least a portion of said flow, and affectpyrolysis of and delivery of said film forming composition to differentregions of said substrate; and one or more power sources coupled to saidheating element array, and configured to provide an electrical signal toeach of said plurality of heating element zones.
 2. The gas heatingdevice of claim 1, further comprising: a controller coupled to said oneor more power sources, and configured to control said electrical signalto each of said plurality of heating element zones, wherein saidcontroller is configured to control one or more electrical parametersincluding current, voltage, or power, or any combination of two or morethereof.
 3. The gas heating device of claim 1, further comprising: a gasdistribution system configured to distribute and flow said film formingcomposition across or through said heating element array.
 4. The gasheating device of claim 3, wherein said gas distribution systemcomprises a plenum configured to receive said film forming composition,and one or more openings aligned with said one or more resistive heatingelements of each of said plurality of heating element zones andconfigured to distribute and flow said film forming composition oversaid one or more resistive heating elements.
 5. The gas heating deviceof claim 3, wherein said gas distribution system is configured tocontrol an amount of said flow of said film forming composition to eachof said plurality of heating element zones.
 6. The gas heating device ofclaim 3, wherein said controller is configured to modulate or pulse saidelectrical signal to at least one of said plurality of heating elementzones.
 7. The gas heating device of claim 1, wherein at least one ofsaid one or more resistive heating elements comprises a metal-containingribbon or metal-containing wire, and wherein said one or more powersources comprise a direct current (DC) power source, or an alternatingcurrent (AC) power source, or a combination thereof.
 8. The gas heatingdevice of claim 1, wherein said one or more resistive heating elementsof at least one of said plurality of heating element zones is assembledin a planar arrangement or a non-planar arrangement.
 9. The gas heatingdevice of claim 1, wherein a spacing relative to said substrate, or anorientation relative to said substrate, or a spacing and an orientationrelative to said substrate of at least one of said plurality of heatingelement zones is different than that of another of said plurality ofheating element zones.
 10. The gas heating device of claim 1, whereinsaid one or more resistive heating elements of at least one of saidplurality of heating element zones is assembled in a planar arrangement,and wherein said planar arrangement of said at least one of saidplurality of heating element zones is tilted relative to said substrateor another of said plurality of heating element zones or both.
 11. Thegas heating device of claim 1, wherein each of said plurality of heatingelement zones are arranged in a plane parallel to and spaced apart froma surface of said substrate.
 12. The gas heating device of claim 1,wherein at least one of said plurality of heating element zones isarranged in a first plane different than a second plane within which atleast another of said plurality of heating element zones is arrangedsuch that the distance between the reaction zone at each of saidplurality of heating element zones varies across a surface of saidsubstrate.
 13. The gas heating device of claim 1, further comprising: apositioning device coupled to at least one of said plurality of heatingelement zones in said heating element array, and configured to adjust aposition of at least one of said plurality of heating element zonesrelative to a surface of said substrate.
 14. The gas heating device ofclaim 1, wherein said one or more heating elements of each of saidplurality of heating element zones comprises: a mounting structureconfigured to support at least one of said one or more resistive heatingelements, said mounting structure comprising: a static mounting devicecoupled to said mounting structure and configured to fixedly couple saidat least one of said one or more resistive heating elements to saidmounting structure, and a dynamic mounting device coupled to saidmounting structure and configured to automatically compensate forchanges in a length of said at least one of said one or more resistiveheating elements, wherein said dynamic mounting device comprises athermal break configured to reduce heat transfer between said dynamicmounting device and said mounting structure, and wherein said at leastone of said one or more resistive heating elements comprises a first endfixedly coupled to said static mounting device, a second end fixedlycoupled to said static mounting device, a bend coupled to said dynamicmounting device and located between said first end and said second end,a first straight section extending between said first end and said bend,and a second straight section extending between said second end and saidbend.
 15. A deposition system for depositing a thin film on a substrate,comprising: a process chamber having a pumping system configured toevacuate said process chamber; a substrate holder coupled to saidprocess chamber and configured to support said substrate; a gasdistribution system coupled to said process chamber and configured tointroduce a film forming composition to a process space in the vicinityof a surface of said substrate; a heating element array having aplurality of heating element zones configured to receive a flow of saidfilm forming composition across or through said plurality of heatingelement zones in order cause pyrolysis of one or more constituents ofsaid film forming composition when heated, each of said plurality ofheating element zones comprises one or more resistive heating elements,wherein each of said plurality of heating element zones is configuredelectrically independent of one another, and wherein each of saidplurality of heating element zones is arranged to interact with at leasta portion of said flow, and affect pyrolysis of and delivery of saidfilm forming composition to different regions of said substrate; and oneor more power sources coupled to said heating element array, andconfigured to provide an electrical signal to each of said plurality ofheating element zones.
 16. The deposition system of claim 15, whereinsaid substrate holder comprises one or more temperature control elementsconfigured to control a temperature of said substrate.
 17. Thedeposition system of claim 15, wherein said substrate holder comprises abackside gas supply system configured to supply a heat transfer gas to abackside of said substrate.
 18. The deposition system of claim 17,wherein said backside gas supply system is configured to independentlysupply said heat transfer gas to a plurality of heat transfer gas supplyzones at said backside of said substrate.
 19. The deposition system ofclaim 18, wherein each of said plurality of heat transfer gas supplyzones at said backside of said substrate uniquely correspond to each ofsaid plurality of heating element zones in said heating element array.20. The gas heating device of claim 15, further comprising: a controllercoupled to said one or more power sources, said substrate holder, andsaid gas distribution system, and configured to control a temperature ofat least one of said plurality of heating element zones, or a flow rateof said film forming composition, or any combination of two or morethereof.
 21. The gas heating device of claim 15, wherein said one ormore resistive heating elements of at least one of said plurality ofheating element zones is assembled in a planar arrangement or anon-planar arrangement.
 22. The deposition system of claim 15, whereinat least one of said plurality of heating element zones is: arranged ina plane parallel to and spaced apart from a surface of said substrate;or arranged in a first plane different than a second plane within whichat least another of said plurality of heating element zones is arrangedsuch that the distance between the reaction zone at each of saidplurality of heating element zones varies across a surface of saidsubstrate; or tilted relative to said substrate or another of saidplurality of heating element zones or both.
 23. The deposition system ofclaim 15, further comprising: a positioning device coupled to at leastone of said plurality of heating element zones in said heating elementarray, and configured to adjust a position of at least one of saidplurality of heating element zones relative to a surface of saidsubstrate.